Full-wave modeling of THz RTD-gated GaN HEMTs
نویسندگان
چکیده
منابع مشابه
Hydrodynamic Modeling of AlGaN/GaN HEMTs
For the needs of high electron mobility transistors (HEMTs) optimization a reliable software simulation tool is required. Due to the high electric field in the device channel a hydrodynamic approach is used to properly model the electron transport. We modify an existing hydrodynamic mobility model in order to achieve a better agreement with Monte Carlo (MC) simulation data and measured DC and A...
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has been developing III-nitride double heterostructures (DHs) with indium gallium nitride (InGaN) channels with a view to high-electron-mobility transistors (HEMTs) [Yi Zhao et al, Appl. Phys. Lett., vol105, p223511, 2014]. The resulting structures boast the highest reported mobility for InGaN channels and superior transport at high temperature, according to the research team. Nitride semicondu...
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Promising material properties of GaN, e.g., wide bandgap, high saturation velocity, and high thermal stability, make it an excellent material for high-power, high-frequency, and high-temperature applications. For some specific applications which require the device to operate at elevated temperatures, modeling and simulation provide very meaningful insights about the thermal device behavior. In ...
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ژورنال
عنوان ژورنال: Infrared Physics & Technology
سال: 2015
ISSN: 1350-4495
DOI: 10.1016/j.infrared.2015.07.017